| Anomalous double-layer step formation on Si (100) in hydrogen process ambient S Brückner, H Döscher, P Kleinschmidt, O Supplie, A Dobrich, ... Physical Review B 86 (19), 195310, 2012 | 63 | 2012 |
| Epitaxial III-V films and surfaces for photoelectrocatalysis H Döscher, O Supplie, MM May, P Sippel, C Heine, AG Muñoz, ... ChemPhysChem 13 (12), 2899, 2012 | 62 | 2012 |
| Metalorganic vapor phase epitaxy of III–V-on-silicon: Experiment and theory O Supplie, O Romanyuk, C Koppka, M Steidl, A Nägelein, A Paszuk, ... Progress in Crystal Growth and Characterization of Materials 64 (4), 103-132, 2018 | 54 | 2018 |
| Time-resolved in situ spectroscopy during formation of the GaP/Si(100) heterointerface O Supplie, MM May, G Steinbach, O Romanyuk, F Grosse, A Nägelein, ... Journal of Physical Chemistry Letters 6, 464, 2015 | 51 | 2015 |
| Atomic scale analysis of the GaP/Si(100) heterointerface by in situ reflection anisotropy spectroscopy and ab initio density functional theory O Supplie, S Brückner, O Romanyuk, H Döscher, C Höhn, MM May, ... Physical Review B 90, 235301, 2014 | 48 | 2014 |
| Indirect in situ characterization of Si (100) substrates at the initial stage of III–V heteroepitaxy H Döscher, O Supplie, S Brückner, T Hannappel, A Beyer, J Ohlmann, ... Journal of Crystal Growth 315 (1), 16-21, 2011 | 42 | 2011 |
| Domain-sensitive in situ observation of layer-by-layer removal at Si (100) in H2 ambient S Brückner, P Kleinschmidt, O Supplie, H Döscher, T Hannappel New Journal of Physics 15 (11), 113049, 2013 | 40 | 2013 |
| Ab initio density functional theory study on the atomic and electronic structure of GaP/Si (001) heterointerfaces O Romanyuk, O Supplie, T Susi, MM May, T Hannappel Physical Review B 94 (15), 155309, 2016 | 36 | 2016 |
| In situ antiphase domain quantification applied on heteroepitaxial GaP growth on Si(100) H Döscher, B Kunert, A Beyer, O Supplie, K Volz, W Stolz, T Hannappel Journal of Vacuum Science & Technology B, Nanotechnology and …, 2010 | 36 | 2010 |
| In situ controlled heteroepitaxy of single-domain GaP on As-modified Si (100) O Supplie, MM May, P Kleinschmidt, A Nägelein, A Paszuk, S Brückner, ... APL Materials 3 (12), 126110, 2015 | 34 | 2015 |
| Materials for light-induced water splitting: In situ controlled surface preparation of GaPN epilayers grown lattice-matched on Si (100) O Supplie, MM May, H Stange, C Höhn, HJ Lewerenz, T Hannappel Journal of Applied Physics 115 (11), 113509, 2014 | 33 | 2014 |
| The interface of GaP (100) and H2O studied by photoemission and reflection anisotropy spectroscopy MM May, O Supplie, C Höhn, R van de Krol, HJ Lewerenz, T Hannappel New Journal of Physics 15 (10), 103003, 2013 | 33 | 2013 |
| In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions O Supplie, MM May, S Brückner, N Brezhneva, T Hannappel, EV Skorb Advanced Materials Interfaces 4, 1601118, 2017 | 29 | 2017 |
| In situ access to the dielectric anisotropy of buried III-V/Si (100) heterointerfaces O Supplie, T Hannappel, M Pristovsek, H Döscher Physical Review B 86 (3), 035308, 2012 | 26 | 2012 |
| Formation of GaP/Si (100) Heterointerfaces in the Presence of Inherent Reactor Residuals O Supplie, MM May, C Höhn, H Stange, A Müller, P Kleinschmidt, ... ACS applied materials & interfaces 7 (18), 9323-9327, 2015 | 25 | 2015 |
| Electronic structures of GaP (100) surface reconstructions probed with two-photon photoemission spectroscopy P Sippel, O Supplie, MM May, R Eichberger, T Hannappel Physical Review B 89 (16), 165312, 2014 | 24 | 2014 |
| In situ control of As dimer orientation on Ge (100) surfaces S Brückner, O Supplie, E Barrigón, J Luczak, P Kleinschmidt, I Rey-Stolle, ... Applied Physics Letters 101 (12), 121602, 2012 | 24 | 2012 |
| GaAsP/Si tandem solar cells: Realistic prediction of efficiency gain by applying strain-balanced multiple quantum wells B Kim, K Toprasertpong, A Paszuk, O Supplie, Y Nakano, T Hannappel, ... Solar Energy Materials and Solar Cells 180, 303, 2018 | 23 | 2018 |
| GaP/Si (0 0 1) interface study by XPS in combination with Ar gas cluster ion beam sputtering O Romanyuk, I Gordeev, A Paszuk, O Supplie, JP Stoeckmann, ... Applied Surface Science 514, 145903, 2020 | 21 | 2020 |
| Controlling the polarity of metalorganic vapor phase epitaxy-grown GaP on Si (111) for subsequent III-V nanowire growth A Paszuk, S Brückner, M Steidl, W Zhao, A Dobrich, O Supplie, ... Applied Physics Letters 106 (23), 231601, 2015 | 21 | 2015 |
Thomas HannappelProfessor for PhysicsVerified email at tu-ilmenau.de
