The physics and chemistry of amorphous silicon oxynitride films are reviewed. Since the
main applications of these materials are in the manufacture of Si-based integrated circuits (ICs), …

In elastic recoil detection (ERD) one determines the yield and energy of particles ejected out
of the surface region of samples under MeV ion bombardment. By application of this surface …

Using a combination of quantitative X-ray photoelectron spectroscopy (XPS) with the high
energy ion beam technique elastic recoil detection (ERD), we focus on the chemical state of …

The rates of metal aluminate formation inMeO x /Al 2 O 3 systems (Me=Ni, Co, Cu, Fe) at 500–1000C
in O 2 or N 2 atmospheres were compared, using bothα-Al 2 O 3 andγ-Al 2 O 3 …

The interactions of O 2 and N 2 O in the low pressure range with a Cu(111) surface and of
CO with adsorbed oxygen have been studied with ellipsometry, Auger electron spectroscopy …

The authors have studied deposition of plasma silicon nitride layers as a function of gas-phase
composition for the SiH4-NH3-x system, where x is N~, Ar, or H2. Most of the depositions …

The effects of discharge radiofrequency (RF) power and film thickness were studied on the
characteristics of Ca 5 (PO 4 ) 3 OH (hydroxyapatite) thin films fabricated by RF magnetron …

In order to investigate the interfacial reaction between NiO and α-Al 2 O 3 to NiAl 2 O 4 at
monolayer level, thin Ni layers (4−29 × 10 15 atoms/cm 2 Ni) were vapour-deposited onto Al 2 …

Silicon oxynitride films with varying oxygen/nitrogen ratio were grown from SiH 4 , N 2 O, and
NH 3 by means of a plasma‐enchanced chemical vapor deposition process. The elemental …

Ellipsometry, LEED, Auger electron spectroscopy and monitoring of work function changes
have been used to study the interactions of O 2 and N 2 O with a clean annealed Cu(100) …