The effective heat of formation (ΔH′) concept allows heats of formation to be calculated as
a function of concentration. In this work the effective heat of formation rule is used to predict …

NONTHERMALPULSED LASER ANNEALING OF Si; PLASMA ANNEALING JA Van VECHTEN’
and R. TSU and FW SARIS In the accompanying [11 p Page 1 Volume 74A, number 6 …

REASONS TO BELIEVE PULSED LASER ANNEALING OF Si DOES NOT INVOLVE
SIMPLE THERMAL MELTING JA Van VECHTEN’ and R. TSU and FW Page 1 Volume 74A …

Although both the Cu/W and Cu/Ta alloy systems are known to be immiscible, the response
of coevaporated amorphous films of a‐Cu x W 1−x (x=0.45–0.72) and a‐Cu x Ta 1−x (x=0.10…

A novel type of toroidal electrostatic energy analyser is described with position sensitive
detection of the particles passing the exit slit of the analyser, different positions corresponding to …

The effective heat of formation (ΔH') of any compound can be calculated as a function of the
concentration of its components. By using this concept in conjunction with the lowest eutectic …

We report the observation of an x-ray band which cannot be identified as a characteristic
atomic x ray either of the target atoms or of the projectiles. The new x ray has been observed …

Oxygen has been found to playa dominant role in TiN barrier performance between Si {1 (0)
and AI. When TiN is exposed to air prior to Al deposition, interdiffusion of the Si/TiN/AI …

Ion implantation in silicon with doses below the amorphization threshold can lead to the
formation of dislocations after high-temperature annealing. We have studied this for implants of …

Temperature-dependent measurements of the photoluminescence (PL) intensity, PL lifetime,
and infrared photocurrent, were performed on an erbium-implanted silicon p–n junction in …