Investigation of trapping and hot-electron effects in GaN HEMTs by means of a combined electrooptical method M Meneghini, N Ronchi, A Stocco, G Meneghesso, UK Mishra, Y Pei, ...
IEEE transactions on electron devices 58 (9), 2996-3003, 2011
171 2011 Analysis of the gate capacitance–voltage characteristics in p-GaN/AlGaN/GaN heterostructures TL Wu, B Bakeroot, H Liang, N Posthuma, S You, N Ronchi, S Stoffels, ...
IEEE Electron Device Letters 38 (12), 1696-1699, 2017
90 2017 An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology NE Posthuma, S You, S Stoffels, D Wellekens, H Liang, M Zhao, ...
2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018
88 2018 Impact of Mg out-diffusion and activation on the p-GaN gate HEMT device performance NE Posthuma, S You, H Liang, N Ronchi, X Kang, D Wellekens, ...
2016 28th International Symposium on Power Semiconductor Devices and ICs …, 2016
86 2016 Performance optimization of Au-free lateral AlGaN/GaN Schottky barrier diode with gated edge termination on 200-mm silicon substrate J Hu, S Stoffels, S Lenci, B Bakeroot, B De Jaeger, M Van Hove, N Ronchi, ...
IEEE Transactions on Electron Devices 63 (3), 997-1004, 2016
80 2016 Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With and Gate Dielectrics M Van Hove, X Kang, S Stoffels, D Wellekens, N Ronchi, R Venegas, ...
IEEE transactions on electron devices 60 (10), 3071-3078, 2013
79 2013 Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors M Meneghini, A Stocco, N Ronchi, F Rossi, G Salviati, G Meneghesso, ...
Applied Physics Letters 97 (6), 2010
56 2010 Statistical analysis of the impact of anode recess on the electrical characteristics of AlGaN/GaN Schottky diodes with gated edge termination J Hu, S Stoffels, S Lenci, B De Jaeger, N Ronchi, AN Tallarico, ...
IEEE Transactions on Electron Devices 63 (9), 3451-3458, 2016
45 2016 Correlation between DC and RF degradation due to deep levels in AlGaN/GaN HEMTs A Chini, F Fantini, V Di Lecce, M Esposto, A Stocco, N Ronchi, F Zanon, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
41 2009 Analog in-memory computing in FeFET-based 1T1R array for edge AI applications D Saito, T Kobayashi, H Koga, N Ronchi, K Banerjee, Y Shuto, J Okuno, ...
2021 Symposium on VLSI Technology, 1-2, 2021
36 2021 Reliability improvements in AlGaN/GaN Schottky barrier diodes with a gated edge termination E Acurio, F Crupi, N Ronchi, B De Jaeger, B Bakeroot, S Decoutere, ...
IEEE Transactions on Electron Devices 65 (5), 1765-1770, 2018
36 2018 Impact of Charge trapping on Imprint and its Recovery in HfO2 based FeFET Y Higashi, N Ronchi, B Kaczer, K Banerjee, SRC McMitchell, ...
2019 IEEE International Electron Devices Meeting (IEDM), 15.6. 1-15.6. 4, 2019
35 2019 Defect profiling in FEFET Si: HfO2 layers BJ O'sullivan, V Putcha, R Izmailov, V Afanas' ev, E Simoen, T Jung, ...
Applied Physics Letters 117 (20), 2020
27 2020 Physical origin of current collapse in Au-free AlGaN/GaN Schottky barrier diodes J Hu, S Stoffels, S Lenci, N Ronchi, R Venegas, S You, B Bakeroot, ...
Microelectronics Reliability 54 (9-10), 2196-2199, 2014
22 2014 Investigation of imprint in FE-HfO₂ and its recovery Y Higashi, B Kaczer, AS Verhulst, BJ O’Sullivan, N Ronchi, ...
IEEE Transactions on Electron Devices 67 (11), 4911-4917, 2020
21 2020 Electroluminescence analysis of time-dependent reverse-bias degradation of HEMTs: A complete model M Meneghini, A Stocco, M Bertin, N Ronchi, A Chini, D Marcon, ...
2011 International Electron Devices Meeting, 19.5. 1-19.5. 4, 2011
21 2011 New Insights into the Imprint Effect in FE-HfO2 and its Recovery Y Higashi, K Florent, A Subirats, B Kaczer, L Di Piazza, S Clima, N Ronchi, ...
2019 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2019
20 2019 Impact of hot electrons on the reliability of AlGaN/GaN high electron mobility transistors M Meneghini, A Stocco, R Silvestri, N Ronchi, G Meneghesso, E Zanoni
2012 IEEE International Reliability Physics Symposium (IRPS), 2C. 2.1-2C. 2.5, 2012
19 2012 First-Principles Perspective on Poling Mechanisms and Ferroelectric/Antiferroelectric Behavior of Hf1 -x Zrx O2 for FEFET Applications S Clima, SRC McMitchell, K Florent, L Nyns, M Popovici, N Ronchi, ...
2018 IEEE International Electron Devices Meeting (IEDM), 16.5. 1-16.5. 4, 2018
18 2018 Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics TL Wu, D Marcon, N Ronchi, B Bakeroot, S You, S Stoffels, M Van Hove, ...
Solid-State Electronics 103, 127-130, 2015
18 2015