Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
576 2019 Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices U Celano, L Goux, A Belmonte, K Opsomer, A Franquet, A Schulze, ...
Nano letters 14 (5), 2401-2406, 2014
353 2014 Intrinsic switching variability in HfO2 RRAM A Fantini, L Goux, R Degraeve, DJ Wouters, N Raghavan, G Kar, ...
2013 5th IEEE International Memory Workshop, 30-33, 2013
249 2013 Improvement of data retention in HfO2 /Hf 1T1R RRAM cell under low operating current YY Chen, M Komura, R Degraeve, B Govoreanu, L Goux, A Fantini, ...
2013 IEEE International Electron Devices Meeting, 10.1. 1-10.1. 4, 2013
140 2013 Causes and consequences of the stochastic aspect of filamentary RRAM R Degraeve, A Fantini, N Raghavan, L Goux, S Clima, B Govoreanu, ...
Microelectronic Engineering 147, 171-175, 2015
115 2015 A Thermally Stable and High-Performance 90-nm -Based 1T1R CBRAM Cell A Belmonte, W Kim, BT Chan, N Heylen, A Fantini, M Houssa, M Jurczak, ...
IEEE transactions on electron devices 60 (11), 3690-3695, 2013
87 2013 Capacitor-less, long-retention (> 400s) DRAM cell paving the way towards low-power and high-density monolithic 3D DRAM A Belmonte, H Oh, N Rassoul, GL Donadio, J Mitard, H Dekkers, ...
2020 IEEE International Electron Devices Meeting (IEDM), 28.2. 1-28.2. 4, 2020
81 2020 Understanding the dual nature of the filament dissolution in conductive bridging devices U Celano, L Goux, A Belmonte, K Opsomer, R Degraeve, C Detavernier, ...
The journal of physical chemistry letters 6 (10), 1919-1924, 2015
65 2015 Hourglass concept for RRAM: A dynamic and statistical device model R Degraeve, A Fantini, N Raghavan, L Goux, S Clima, YY Chen, ...
Proceedings of the 21th International Symposium on the Physical and Failure …, 2014
53 2014 Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories U Celano, G Giammaria, L Goux, A Belmonte, M Jurczak, W Vandervorst
Nanoscale 8 (29), 13915-13923, 2016
52 2016 RRAMs based on anionic and cationic switching: a short overview S Clima, K Sankaran, YY Chen, A Fantini, U Celano, A Belmonte, L Zhang, ...
physica status solidi (RRL)–Rapid Research Letters 8 (6), 501-511, 2014
51 2014 90nm W\Al2 O3 \TiW\Cu 1T1R CBRAM cell showing low-power, fast and disturb-free operation A Belmonte, W Kim, BT Chan, N Heylen, A Fantini, M Houssa, M Jurczak, ...
2013 5th IEEE International Memory Workshop, 26-29, 2013
47 2013 Influence of carbon alloying on the thermal stability and resistive switching behavior of copper-telluride based CBRAM cells W Devulder, K Opsomer, F Seidel, A Belmonte, R Muller, B De Schutter, ...
ACS applied materials & interfaces 5 (15), 6984-6989, 2013
45 2013 Tailoring switching and endurance / retention reliability characteristics of HfO2 / Hf RRAM with Ti, Al, Si dopants YY Chen, R Roelofs, A Redolfi, R Degraeve, D Crotti, A Fantini, S Clima, ...
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014
41 2014 Conductive-AFM tomography for 3D filament observation in resistive switching devices U Celano, L Goux, A Belmonte, A Schulze, K Opsomer, C Detavernier, ...
2013 IEEE International Electron Devices Meeting, 21.6. 1-21.6. 4, 2013
39 2013 Origin of the current discretization in deep reset states of an Al2O3/Cu-based conductive-bridging memory, and impact on state level and variability A Belmonte, R Degraeve, A Fantini, W Kim, M Houssa, M Jurczak, L Goux
Applied Physics Letters 104 (23), 2014
38 2014 A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From – , – , and – Measurements A Padovani, B Kaczer, M Pešić, A Belmonte, M Popovici, L Nyns, D Linten, ...
IEEE Transactions on Electron Devices 66 (4), 1892-1898, 2019
35 2019 Operating-current dependence of the Cu-mobility requirements in oxide-based conductive-bridge RAM A Belmonte, U Celano, R Degraeve, A Fantini, A Redolfi, W Vandervorst, ...
IEEE Electron Device Letters 36 (8), 775-777, 2015
35 2015 Analysis of the Excellent Memory Disturb Characteristics of a Hourglass-Shaped Filament in Al2 O3 /Cu-Based CBRAM Devices A Belmonte, U Celano, A Redolfi, A Fantini, R Muller, W Vandervorst, ...
IEEE Transactions on Electron Devices 62 (6), 2007-2013, 2015
34 2015 Switching mechanism and reverse engineering of low-power Cu-based resistive switching devices U Celano, L Goux, K Opsomer, A Belmonte, M Iapichino, C Detavernier, ...
Nanoscale 5 (22), 11187-11192, 2013
34 2013